THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

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Multiple quantum-well (MQW) electroabsorptive self electro Hangers optic-effect devices (SEEDs) are being extensively studied for use in optical switching and computing.The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs) electronic circuits.The optical inputs and outputs are based on quantum-well absorptive properties.These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently.The most important advance in the physics OSTEOMOVE EX STRENGTH of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology.

GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.